The impacts of the substrate pn junction isolation on the inductor quality factor ( q ) are studied and experimental results show that a certain deep substrate pn junction isolation achieves good improvement 结果表明这种方法是可行的， b一一定深度的衬底pn结隔离能有效的使q值提高。
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A novel method for reducing the substrate - rated losses of integrated spiral inductors is presented . the method is that directly forming pn junction isolation in the si substrate to block the eddy currents induced by spiral inductors . the substrate pn junction can be realized in standard silicon technologies without additional processing steps 提出了一种新的方法来减小硅衬底损耗提高集成电感的q值：在硅衬底形成间隔的pn结隔离以阻止涡流减少损耗，这种方法工艺简单且与常规硅集成电路工艺兼容。
